It takes as input a representation of a setof logic functions.

The SIS technology is available for licensing.
Additionally, Argonne is seeking partners for further technology development and commercialization of SIS lithography.

Origin of synthesisClassical Greek from syn-, together + tithenai, to place, do

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Origin of synthesisLatin collection from Greek sunthesis from suntithenai to put together sun- syn- tithenai to put ; see dhē- in Indo-European roots.


| | | Content Last Updated: 12/13/2012

SIS is an interactive tool for synthesis and optimization of sequential circuits. Given a state transition table, a signal transition graph, or a logic-level description of a sequential circuit, it produces an optimized net-list in the target technology while preserving the sequential input-output behavior. Many different programs and algorithms have been integrated into SIS, allowing the user to choose among a variety of techniques at each stage of the process. It is built on top of MISII [5] and includes all (combinational) optimization techniques therein as well as many enhancements. SIS serves as both a framework within which various algorithms can be tested and compared, and as a tool for automatic synthesis and optimization of sequential circuits. This paper provides an overview of SIS. The first part contains descriptions of the input specification, STG (state transition graph) manipulation, new logic optimization and verification algorithms, ASTG (asynchronous signal transition graph) manipulation, and synthesis for PGA’s (programmable gate arrays). The second part contains a tutorial example illustrating the design process using SIS.

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The script used for running the examples tries to optimize the inputcircuit for area, and synthesizes the circuit all the way down to thelevel of logic gates from a standard library.

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Directed self-assembly (DSA) of block copolymers is targeted as a next-generation lithographic technique for ultra-high resolution patterning. SIS enables practical applications of DSA by dramatically improving both the etch resistance and differential etch resistance of block copolymer films.

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Directed self-assembly (DSA) of block copolymers is targeted as a next-generation lithographic technique for ultra-high resolution patterning. SIS enables practical applications of DSA by dramatically improving both the etch resistance and differential etch resistance of block copolymer films.